MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
نویسندگان
چکیده
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were 400 nm. The lowest threshold current density obtained was 6 kA cm with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved. © 1999 Elsevier Science S.A. All rights reserved.
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تاریخ انتشار 1999